Magnetic memory cells and methods of formation

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United States of America Patent

PATENT NO 9548444
APP PUB NO 20150214472A1
SERIAL NO

14685236

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Abstract

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Memory cells including cell cores having free regions are disclosed. The free regions exhibit a strain that affects a magnetization orientation within the cell core. A stressor structure may exert a stress upon at least a portion of the cell core to effect the strain state of the free region. Also disclosed are semiconductor device structures and systems including such memory cells as well as methods for forming such memory cells.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kinney, Wayne I Emmett, US 38 933
Sandhu, Gurtej S Boise, US 1216 32319

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