Apparatus and method for curvature and thin film stress measurement

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United States of America Patent

PATENT NO 9551569
APP PUB NO 20160102968A1
SERIAL NO

14513168

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Abstract

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Apparatus and method for curvature and thin film stress measurement are disclosed. The apparatus comprises two light sources and a detector. Two light beams from the two light sources with an angle are not parallel. The two light beams are collimated and projected onto a specimen with a pitch. The detector receives the light beams reflected from the specimen. The curvature of the specimen is calculated via a distance between spots of the light beams on the detector or a size variation of one of the spots.

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Patent Owner(s)

Patent OwnerAddress
HERMES-EPITEK CORPORATION14F NO 38 SEC 2 DUN-HUA S ROAD DA-AN DISTRICT TAIPEI 10683

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Champetier, Robert Hsinchu, TW 4 70
Chung, Bu-Chin Hsinchu, TW 13 151
Fu, Chung-Hua Hsinchu, TW 3 7
Wu, Chung-Yuan Hsinchu, TW 6 28

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