Defect classifying method and optical inspection apparatus for silicon carbide substrate
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United States of America Patent
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Jan 24, 2017
Grant Date -
Jun 18, 2015
app pub date -
Dec 18, 2014
filing date -
Dec 18, 2013
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Abstract
Provided are a defect classifying method and an inspection apparatus which are capable of classifying a defect by distinguishing a basal plane dislocation, which is a killer defect in bipolar high-voltage elements, from other defects. The defect classifying method according to the present invention includes: projecting an illumination beam toward a silicon carbide substrate and forming a reflection image and a photoluminescence image; a first inspection step of detecting a defect image from the reflection image formed; a second inspection step of detecting a defect image from the photoluminescence image formed; and a defect classification step of classifying detected defects based on whether or not the defect image is detected and the shape of the detected defect image.
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