STT-MRAM cell structure incorporating piezoelectric stress material

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United States of America Patent

PATENT NO 9552858
APP PUB NO 20160078912A1
SERIAL NO

14947978

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Abstract

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A magnetic memory cell including a piezoelectric material, and methods of operating the memory cell are provided. The memory cell includes a stack, and the piezoelectric material may be formed as a layer in the stack or adjacent the layers of the cell stack. The piezoelectric material may be used to induce a transient stress during programming of the memory cell to reduce the critical switching current of the memory cell.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kramer, Steve Boise, US 26 1092
Liu, Jun Boise, US 1409 16637
Sandhu, Gurtej Boise, US 243 7795

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