OVERHANG HARDMASK TO PREVENT PARASITIC EPITAXIAL NODULES AT GATE END DURING SOURCE DRAIN EPITAXY
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
N/A
app pub date -
Aug 19, 2015
filing date -
Aug 19, 2015
priority date (Note) -
Granted
status (Latency Note)
Importance
Abstract
A method of making a semiconductor device includes forming a gate covered by a hard mask over a substrate; disposing a mask over the gate and the hard mask; patterning the mask to expose a portion of the gate and the hard mask; cutting the gate and hard mask to form two shorter gates, each of the two shorter gates having an exposed end portion; undercutting the exposed end portion of at least one of the two shorter gates to form an overhanging hard mask portion over the exposed end portion; and forming spacers along a gate sidewall and beneath the overhanging hard mask portion.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully