Etching method, and method of producing semiconductor substrate product and semiconductor device using the same

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United States of America Patent

PATENT NO 9558953
APP PUB NO 20150118860A1
SERIAL NO

14593150

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Abstract

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An etching method, having the step of applying an etching liquid onto a TiN-containing layer in a semiconductor substrate thereby etching the TiN-containing layer, the etching liquid comprising water, and a basic compound and an oxidizing agent in water thereof to be within the range of pH from 8.5 to 14, and the TiN-containing layer having a surface oxygen content from 0.1 mol % to 10 mol %.

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Patent Owner(s)

  • FUJIFILM CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Inaba, Tadashi Shizuoka, JP 75 517
Kamimura, Tetsuya Shizuoka, JP 146 439
Muro, Naotsugu Shizuoka, JP 46 182
Park, Kee Young Shizuoka, JP 36 75
Watanabe, Takahiro Shizuoka, JP 216 2235

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