Resistive random access memory device and manufacturing method thereof

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9559300
APP PUB NO 20150083989A1
SERIAL NO

14472670

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Abstract

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In accordance with an embodiment, a resistive random access memory device includes a substrate, first and second wiring lines, and a storage cell. The first and second wiring lines are disposed on the substrate so as to intersect each other. The storage cell is disposed between the first and second wiring lines at the intersection of the first and second wiring lines and includes a first electrode, a resistive switching film on the first electrode, a second electrode on the resistive switching film, and a tantalum oxide (TaOx) layer. The first electrode is electrically connected to the first wiring line. The second electrode is electrically connected to the second wiring line. The tantalum oxide (TaOx) layer is disposed between the first electrode and the resistive switching film and is in contact with the resistive switching film.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ode, Hiroyuki Yokkaichi, JP 89 356
Takagi, Takeshi Yokkaichi, JP 192 3020
Tanaka, Toshiharu Yokkaichi, JP 87 697
Yamaguchi, Takeshi Yokkaichi, JP 383 3216
Yamato, Masaki Yokkaichi, JP 35 548

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