Memory device having a different source line coupled to each of a plurality of layers of memory cell arrays

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United States of America Patent

PATENT NO 9564227
APP PUB NO 20160064085A1
SERIAL NO

14936719

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Abstract

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A sensing voltage may be applied to a particular memory cell that is in a particular layer of a plurality of layers of memory cells. While the sensing voltage is applied to the particular memory cell, a source voltage may be applied to an end of a string of memory cells that includes the particular memory cell. The source line voltage may be based on a programming rate of the particular layer.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Goda, Akira Boise, US 300 4165
Liu, Zengtao Boise, US 29 1015

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