Method of forming thin film of semiconductor device
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United States of America Patent
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Feb 7, 2017
Grant Date -
Feb 18, 2016
app pub date -
Aug 14, 2014
filing date -
Aug 14, 2014
priority date (Note) -
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Abstract
Provided is a method of forming a thin film of a semiconductor device. The method includes forming a precursor layer on a surface of a substrate by supplying a precursor gas into a chamber, discharging the precursor gas remaining in the chamber to an outside of the chamber by supplying a purge gas into the chamber, supplying a reactant gas into the chamber, generating plasma based on the reactant gas, forming a thin film by a chemical reaction between plasma and the precursor layer and radiating extreme ultraviolet (EUV) light into the chamber, and discharging the reactant gas and the plasma remaining in the chamber by supplying a purge gas into the chamber.
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