Methods of forming contacts for a semiconductor device structure, and related methods of forming a semiconductor device structure
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United States of America Patent
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Feb 7, 2017
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app pub date -
Apr 8, 2015
filing date -
Apr 8, 2015
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Abstract
A method of forming contacts for a semiconductor device structure comprises forming contact holes extending into neighboring semiconductive pillars and into a nitride material of nitride-capped electrodes. Composite structures are formed within the contact holes and comprise oxide structures over sidewalls of the contact holes and nitride structures over the oxide structures. Conductive structures are formed over inner sidewalls of the composite structures. Additional nitride-capped electrodes are formed over the conductive structures and extend perpendicular to the nitride-capped electrodes. Pairs of nitride spacers are formed over opposing sidewalls of the additional nitride-capped electrodes and are separated from neighboring pairs of nitride spacers by apertures extending to upper surfaces of a portion of the neighboring semiconductive pillars. Portions of the oxide structures are removed to expose sidewalls of the portion of the neighboring semiconductive pillars. Semiconductor device structures and additional methods are also described.
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