Apparatus and methods for forming a modulation doped non-planar transistor

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United States of America Patent

PATENT NO 9564490
SERIAL NO

14985282

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Embodiments of an apparatus and methods for providing three-dimensional complementary metal oxide semiconductor devices comprising modulation doped transistors are generally described herein. Other embodiments may be described and claimed, which may include forming a modulation doped heterostructure, comprising forming an active portion having a first bandgap and forming a delta doped portion having a second bandgap.

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  • INTEL CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dewey, Gilbert Hillsboro, US 438 4094
Hudait, Mantu Blacksburg, US 15 135
Kavalieros, Jack Portland, US 270 9067
Pillarisetty, Ravi Portland, US 449 7344
Rachmady, Willy Beaverton, US 424 5611
Radosavljevic, Marko Portland, US 465 4706

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