Doping an absorber layer of a photovoltaic device via diffusion from a window layer

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United States of America Patent

PATENT NO 9564543
SERIAL NO

14546697

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Methods for doping an absorbent layer of a p-n heterojunction in a thin film photovoltaic device are provided. The method can include depositing a window layer on a transparent substrate, where the window layer includes at least one dopant (e.g., copper). A p-n heterojunction can be formed on the window layer, with the p-n heterojunction including a photovoltaic material (e.g., cadmium telluride) in an absorber layer. The dopant can then be diffused from the window layer into the absorber layer (e.g., via annealing).

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Patent Owner(s)

  • FIRST SOLAR, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Feldman-Peabody, Scott Daniel Golden, US 66 170
Gossman, Robert Dwayne Aurora, US 42 115

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