Semiconductor storage device and memory system
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United States of America Patent
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Feb 14, 2017
Grant Date -
Jun 30, 2016
app pub date -
Mar 7, 2016
filing date -
Sep 11, 2013
priority date (Note) -
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Abstract
A semiconductor storage device has a memory string including a memory cell, a bit line electrically connected to one end of the memory string, and a sense amplifier electrically connected to the bit line. The sense amplifier has a first transistor, one end of which is connected to a first node on an electric current path of the bit line, and another end of which is electrically connected to a second node, a second transistor electrically connected between the second node and a sense node, and a third transistor, a gate of which is connected to the first node, and the third transistor being electrically connected between the second node and a third node whose voltage can be adjusted.
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