Rinsing solution to prevent TiN pattern collapse
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United States of America Patent
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Feb 14, 2017
Grant Date -
Jun 18, 2015
app pub date -
Jun 21, 2013
filing date -
Jun 22, 2012
priority date (Note) -
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Abstract
The present invention is a new formulation and process for treating TiN semiconductor devices having a high aspect ratio structure formed thereon. The new composition is designed to be used in the chip making process between cleaning a wet etched memory device and its final rinse/drying process. It is intended to include the treatment in order to prevent collapse of the high aspect ratio TiN structure found on the semiconductor device.
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