Photoelectric conversion device and manufacturing method of the same
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United States of America Patent
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Feb 14, 2017
Grant Date -
Nov 19, 2015
app pub date -
Apr 30, 2015
filing date -
May 14, 2014
priority date (Note) -
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Abstract
A photoelectric conversion device includes a pixel circuit section including: a first semiconductor region containing a first conductivity type impurity; a second semiconductor region formed in the first semiconductor region by using the first conductivity type impurity; a third semiconductor region formed in the second semiconductor region by using a second conductivity type impurity; and a contact plug formed on the third semiconductor region. A net concentration of the first conductivity type impurity is higher in the second semiconductor region than in the first and third semiconductor regions. In the second and third semiconductor regions, a distance between the contact plug and a position where the concentration of the second conductivity type impurity is maximum is equal to or less than a distance between the contact plug and a position where the concentration of the first conductivity type impurity is maximum.
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