Fortification of charge-storing material in high-K dielectric environments and resulting apparatuses
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United States of America Patent
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Feb 21, 2017
Grant Date -
Jul 16, 2015
app pub date -
Mar 24, 2015
filing date -
Mar 22, 2010
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Abstract
Memories, systems, and methods for forming memory cells are disclosed. One such memory cell includes a charge storage node that includes nanodots over a tunnel dielectric and a protective film over the nanodots. In another memory cell, the charge storage node includes nanodots that include a ruthenium alloy. Memory cells can include an inter-gate dielectric over the protective film or ruthenium alloy nanodots and a control gate over the inter-gate dielectric. The protective film and ruthenium alloy can be configured to protect at least some of the nanodots from vaporizing during formation of the inter-gate dielectric.
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