Grass removal in patterned cavity etching
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United States of America Patent
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Feb 21, 2017
Grant Date -
Aug 4, 2016
app pub date -
Dec 10, 2013
filing date -
Dec 10, 2012
priority date (Note) -
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status (Latency Note)
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Abstract
A method of manufacturing a semiconductor device includes providing a first semiconductor substrate having a first main surface and an opposing second main surface, and forming a pattern into the first semiconductor substrate. The pattern includes a plurality of trenches defining a plurality of mesas. Each of the plurality of mesas has sidewalls and a free surface formed by material of the first semiconductor substrate. The method further includes forming a cavity in the first semiconductor substrate such that the pattern is recessed in the cavity, forming an oxide layer in the cavity and on the sidewalls and free surfaces of the plurality of mesas, and etching the oxide layer to remove the oxide layer from the free surfaces of the plurality of mesas and at least a portion of the sidewalls of the plurality of mesas.
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