Integrated circuits with self aligned contacts and methods of manufacturing the same
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United States of America Patent
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Feb 21, 2017
Grant Date -
Dec 29, 2016
app pub date -
Jun 26, 2015
filing date -
Jun 26, 2015
priority date (Note) -
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Abstract
Integrated circuits and methods for producing the same are provided. A method for producing an integrated circuit includes forming an interconnect in a first interlayer dielectric. A first cap is formed overlying the first interlayer dielectric adjacent to the interconnect, and a second interlayer dielectric is formed overlying the first interlayer dielectric, the interconnect, and the cap. A contact is formed through the second interlayer dielectric, where the contact includes an overlap region and a connection region. The overlap region directly overlies the first interlayer dielectric adjacent to the interconnect, and the connection region directly contacts the interconnect. The first cap is positioned between the overlap region and the first interlayer dielectric.
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