Dual metal gate electrode for reducing threshold voltage
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United States of America Patent
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Feb 21, 2017
Grant Date -
Apr 28, 2016
app pub date -
Oct 27, 2014
filing date -
Oct 27, 2014
priority date (Note) -
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Abstract
A gate conductor material stack including, from bottom to top, of a first metallic nitride, a second metallic nitride, and a conductive material portion is employed for a transistor in combination with a gate dielectric including a high dielectric constant (high-k) dielectric material. The second metallic nitride includes a nitride of an aluminum-containing metallic alloy of at least two elemental metals, and can be selected from TaAlN, TiAlN, and WAlN. The second metallic nitride can provide a function of oxygen scavenging from the high-k gate dielectric and/or prevent diffusion of atoms from the conductive material portion. The gate conductor material stack can enable a reduced inversion thickness and/or a reduced magnitude for a linear threshold voltage for p-type field effect transistors compared with a gate electrode employing a single metallic material.
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