Salicide formation on replacement metal gate finFet devices
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United States of America Patent
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Feb 21, 2017
Issued Date -
N/A
app pub date -
May 19, 2015
filing date -
May 19, 2015
priority date (Note) -
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Abstract
A fin field effect transistor (finFET) device and a method of fabricating a finFET are described. The method includes forming a replacement gate stack on a substrate between inside walls of sidewall spacers, epitaxially growing a raised source drain (RSD) on the substrate adjacent to outside walls of the sidewall spacers, and forming a silicide above the RSD and along the outside walls of the sidewall spacers. The method also includes depositing and polishing a contact metal above portions of the replacement gate stack and the RSD, the contact metal contacting the silicide along the outside walls of the sidewall spacers adjacent to the portions of the replacement gate stack.
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