Semiconductor constructions and methods of forming memory cells
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United States of America Patent
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Feb 21, 2017
Grant Date -
Feb 25, 2016
app pub date -
Sep 14, 2015
filing date -
May 23, 2013
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Abstract
Some embodiments include semiconductor constructions having stacks containing electrically conductive material over dielectric material. Programmable material structures are directly against both the electrically conductive material and the dielectric material along sidewall surfaces of the stacks. Electrode material electrically coupled with the electrically conductive material of the stacks. Some embodiments include methods of forming memory cells in which a programmable material plate is formed along a sidewall surface of a stack containing electrically conductive material and dielectric material.
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