Growth of large aluminum nitride single crystals with thermal-gradient control

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United States of America Patent

PATENT NO 9580833
APP PUB NO 20150218728A1
SERIAL NO

14686812

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In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.

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CRYSTAL IS INC70 COHOES AVENUE GREEN ISLAND NY 12183

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bondokov, Robert T Watervliet, US 43 826
Gibb, Shawn R Clifton Park, US 49 877
Rao, Shailaja P Albany, US 16 171
Schowalter, Leo J Latham, US 87 1665

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