Semiconductor memory device having crossing interconnects separated by stacked films
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United States of America Patent
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Feb 28, 2017
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app pub date -
Jul 11, 2013
filing date -
Feb 28, 2013
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Abstract
According to one embodiment, a semiconductor memory device includes a plurality of first interconnects extending in a first direction, a plurality of second interconnects extending in a second direction, a plurality of stacked films respectively provided between the first interconnects and the second interconnects, each of the plurality of stacked films including a variable resistance film, a first inter-layer insulating film provided in a first region between the stacked films, and a second inter-layer insulating film provided in a second region having a wider width than the first region. The second inter-layer insulating film includes a plurality of protrusions configured to support one portion of the plurality of second interconnects on the second region. A protruding length of the protrusions is less than a stacking height of the stacked films.
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- 15 United States
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Patent Owner(s)
- TOSHIBA MEMORY CORPORATION
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Noda, Kotaro | Mie-ken, JP | 52 | 95 |
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