Methods for producing integrated circuits using long and short regions and integrated circuits produced from such methods
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United States of America Patent
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Feb 28, 2017
Grant Date -
Jan 12, 2017
app pub date -
Jul 10, 2015
filing date -
Jul 10, 2015
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Abstract
Integrated circuits and methods for producing the same are provided. In an exemplary embodiment, a method for producing an integrated circuit includes forming a work function layer overlying a substrate and a plurality of dielectric columns. The dielectric columns and the substrate define a short region having a short region width and a long region having a long region width greater than the short region width. The work function layer is recessed in the long region to a long region work function height that is between a dielectric column top surface and a substrate top surface. The work function layer is also recessed in the short region to a short region work function height that is between the dielectric column top surface and the substrate top surface. Recessing the work function layer in the long and short regions is conducted in the absence of lithography techniques.
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