Semiconductor devices with shaped cavities for embedding germanium material and manufacturing processes thereof

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9583619
APP PUB NO 20160240672A1
SERIAL NO

14691508

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

The present invention is directed to semiconductor processes and devices. More specifically, embodiments of the present invention provide a shaped cavity that this later to be filled with SiGe material. The shape cavity comprises convex regions interfacing the substrate. There are other embodiments as well.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
SHANGHAI HUALI MICROELECTRONICS CORPORATIONNO 6 LIANGTENG ROAD PUDONG NEW AREA SHANGHAI 201314

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Kun Shanghai, CN 67 210
Li, Fang Shanghai, CN 113 294
Zhu, Yefang Shanghai, CN 4 6

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
11.5 Year Payment $7400.00 $3700.00 $1850.00 Aug 28, 2028
Fee Large entity fee small entity fee micro entity fee
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00