Compound finFET device including oxidized III-V fin isolator

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United States of America Patent

PATENT NO 9589791
APP PUB NO 20160379820A1
SERIAL NO

14948541

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Abstract

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A semiconductor device includes a wafer having a bulk layer and a III-V buffer layer on an upper surface of the bulk layer. The semiconductor device further includes at least one semiconductor fin on the III-V buffer layer. The semiconductor fin includes a III-V channel portion. Either the wafer or the semiconductor fin includes an oxidized III-V portion interposed between the III-V channel portion and the III-V buffer layer to prevent current leakage to the bulk layer.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Szu-Lin Yorktown Heights, US 79 1422
Lauer, Isaac Yorktown Heights, US 218 1821
Shiu, Kuen-Ting Yorktown Heights, US 122 769
Yau, Jeng-Bang Yorktown Heights, US 144 1325

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