PREVENTING LEAKAGE INSIDE AIR-GAP SPACER DURING CONTACT FORMATION
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United States of America Patent
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Mar 7, 2017
Grant Date -
Mar 16, 2017
app pub date -
Sep 10, 2015
filing date -
Sep 10, 2015
priority date (Note) -
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Abstract
Techniques for preventing leakage of contact material into air-gap spacers during contact formation. For example, a method comprises forming a contact trench on a semiconductor structure over an air-gap spacer and depositing a liner in the contact trench. The liner deposition material fills a portion of the air-gap spacer pinching off the contact trench to the air-gap spacer.
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