Fin cut enabling single diffusion breaks
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United States of America Patent
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Mar 7, 2017
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app pub date -
May 23, 2016
filing date -
May 23, 2016
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Abstract
A method is provided for forming a fin cut that enables a single diffusion break in very dense CMOS structures formed using bulk semiconductor substrates. A dummy gate is removed from a finned structure to expose the top regions of the fins, the bottom fin regions being within a shallow trench isolation region. Selective vapor phase etching follows sequential ion implantation of the top and bottom fin regions to form a diffusion break cut region. The non-implanted regions of the substrate and the shallow trench isolation region remain substantially intact during each etching procedure. Double diffusion break cut regions are also enabled by the method.
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