Semiconductor device and method of forming base leads from base substrate as standoff for stacking semiconductor die
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United States of America Patent
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Mar 7, 2017
Grant Date -
Aug 22, 2013
app pub date -
Mar 18, 2013
filing date -
Sep 2, 2010
priority date (Note) -
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Abstract
A semiconductor device has a base substrate with first and second opposing surfaces. A first etch-resistant conductive layer is formed over the first surface of the base substrate. A second etch-resistant conductive layer is formed over the second surface of the base substrate. A first semiconductor die has bumps formed over contact pads on an active surface of the first die. The first die is mounted over a first surface of the first conductive layer. An encapsulant is deposited over the first die and base substrate. A portion of the base substrate is removed to form electrically isolated base leads between opposing portions of the first and second conductive layers. A second semiconductor die is mounted over the encapsulant and a second surface of the first conductive layer between the base leads. A height of the base leads is greater than a thickness of the second die.
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