Magnetoresistive memory device and manufacturing method of the same
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United States of America Patent
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Mar 7, 2017
Grant Date -
Apr 14, 2016
app pub date -
Feb 23, 2015
filing date -
Oct 8, 2014
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Abstract
According to one embodiment, a manufacturing method of a magnetoresistive memory device includes forming a first magnetic layer on a substrate, forming a magnetoresistive effect element on the first magnetic layer, forming a mask on a part of the magnetoresistive effect element, selectively etching the magnetoresistive effect element using the mask, forming a sidewall insulating film on a sidewall of the magnetoresistive effect element exposed by the etching, selectively etching the first magnetic layer using the mask and the sidewall insulating film and forming a deposition layer containing a magnetic material on a sidewall of the first magnetic layer and the sidewall insulating film, and introducing ions into the deposition layer.
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