Semiconductor amplifier bias circuit and semiconductor amplifier device
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United States of America Patent
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-
Mar 7, 2017
Grant Date -
May 5, 2016
app pub date -
Aug 4, 2015
filing date -
Oct 31, 2014
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A semiconductor amplifier bias circuit includes a first transmission line, a first grounded capacitor, a second transmission line and a power supply terminal. The first transmission line is connected to an output end part of the output matching circuit and the external load. The second transmission line includes one end part connected to the first transmission line and the other end part connected to the first grounded shunt capacitor. An electrical length of the second transmission line is approximately 90° at a center frequency of a band. The one end part is connected to the first transmission line at a position apart from the output end part by an electrical length of approximately 45° at the center frequency. The power supply terminal is connected to a connection point of the first grounded shunt capacitor and the other end part of the second transmission line.
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