Importance

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Abstract

The invention relates to a current sense amplifier (103) comprising a reference current input terminal (109), a sense control line input terminal (125), a sense current input terminal (108), a first output terminal (106), and a second output terminal (107). The amplifier further comprises a first NAND gate (100) comprising an output terminal being connected to the first output terminal (106), a second NAND gate (101) comprising an output terminal being connected to the second output terminal (106), a first (T1, T5) and a second (T2, T6) cross coupled inverters, the first inverter comprising a first n-FET (T1) and the second inverter comprising a second n-FET (T2), a transmission gate (104) comprising a first and a second transmission terminal and a transmission control terminal, the transmission control terminal being connected to the sense control line input terminal (125), an AND gate (130) having a first input terminal connected to the first output terminal (106) and a second input terminal connected to the second output terminal (107), a third n-FET (T3) having a gate connected to an output terminal of the AND gate (130), a drain connected to the sense current input terminal, a source connected to ground, wherein a source of the first n-FET is connected to the sense current input terminal and a source of the second n-FET is connected to the reference current input terminal, a first input terminal of the first NAND gate and a first input terminal of the second NAND gate are connected to the sense control line input terminal, the first transmission terminal and a second input terminal of the first NAND gate are connected to an output terminal of the second inverter and the second transmission terminal and a second input terminal of the second NAND gate are connected to an output terminal of the first inverter.

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First Claim