Coaxial carbon nanotube capacitor for eDRAM

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United States of America Patent

PATENT NO 9595527
APP PUB NO 20160233219A1
SERIAL NO

15132495

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Abstract

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A deep trench (DT) opening is provided in a semiconductor substrate and then conducting carbon nanotubes are formed within the DT. Each conducting carbon nanotube is coated with a high k dielectric material and thereafter the remaining volume of the DT is filled with a conductive material.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Vega, Reinaldo A Wappingers Falls, US 91 1199

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