Enhanced hydrogen barrier encapsulation method for the control of hydrogen induced degradation of ferroelectric capacitors in an F-RAM process

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United States of America Patent

PATENT NO 9595576
APP PUB NO 20150115408A1
SERIAL NO

14514008

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Abstract

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An encapsulated ferroelectric capacitor or ferroelectric memory cell includes encapsulation materials adjacent to a ferroelectric capacitor, a ferroelectric oxide (FEO) layer over the encapsulated ferroelectric capacitor, and an FEO encapsulation layer over the ferroelectric oxide to provide protection from hydrogen induced degradation.

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Patent Owner(s)

  • CYPRESS SEMICONDUCTOR CORPORATION;RAMTRON INTERNATIONAL CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Davenport, Tom E Denver, US 6 23
Sun, Shan Monument, US 41 308

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