Method of forming field effect transistors (FETs) with abrupt junctions and integrated circuit chips with the FETs
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United States of America Patent
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Mar 14, 2017
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app pub date -
Jun 25, 2015
filing date -
Jun 25, 2015
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Abstract
A method of forming field effect transistors (FETs) and on Integrated Circuit (IC) chips with the FETs. Channel placeholders at FET locations are undercut at each end of FET channels. Source/drain regions adjacent to each channel placeholder extend into and fill the undercut. The channel placeholder is opened to expose channel surface under each channel placeholder. Source/drain extensions are formed under each channel placeholder, adjacent to each source/drain region. After removing the channel placeholders metal gates are formed over each said FET channel.
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