Semiconductor device including dual spacer and uniform epitaxial buffer interface of embedded SiGe source/drain
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United States of America Patent
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Mar 14, 2017
Grant Date -
Mar 2, 2017
app pub date -
Nov 25, 2015
filing date -
Aug 25, 2015
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Abstract
A semiconductor device includes at least one semiconductor fin on an upper surface of a semiconductor substrate. The semiconductor fin includes a channel region formed of a first semiconductor material interposed between opposing embedded source/drain regions formed of a second semiconductor material different from the first semiconductor material. At least one gate stack is formed on the upper surface of the semiconductor substrate and wraps around the channel region. The embedded source/drain regions have a symmetrical shape and a uniform embedded interface.
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