Semiconductor device including epitaxially formed buried channel region

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United States of America Patent

PATENT NO 9595598
SERIAL NO

14953481

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Abstract

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A semiconductor device includes at least one semiconductor fin on an upper surface of a substrate. The at least one semiconductor fin includes a channel region interposed between opposing source/drain regions. A gate stack is on the upper surface of the substrate and wraps around sidewalls and an upper surface of only the channel region. The channel region is a dual channel region including a buried channel portion and a surface channel portion that completely surrounds the buried channel.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Deng, Jie San Jose, US 54 998
Kerber, Pranita Mount Kisco, US 101 708
Ouyang, Qiqing C Yorktown Heights, US 60 1096
Reznicek, Alexander Troy, US 1406 11101

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