Forming semiconductor fins with self-aligned patterning

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United States of America Patent

PATENT NO 9595613
SERIAL NO

15173803

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Abstract

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A method for fabricating a semiconductor device comprises removing a portion of a substrate to form a first cavity in the substrate and depositing an insulator material in the first cavity. A sacrificial pattern is formed on a portion of the insulator material in the first cavity and the substrate. Exposed portions of the substrate are removed to form a fin in the substrate. A gate stack is formed over a portion of the fin.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Kangguo Schenectady, US 3065 29546
Lie, Fee Li Albany, US 177 990
Xu, Peng Guilderland, US 636 4299

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