MOS capacitors flow type devices and methods of forming the same

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United States of America Patent

PATENT NO 9595621
APP PUB NO 20160293778A1
SERIAL NO

15085788

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Abstract

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A capacitor structure is described. The capacitor structure includes a substrate; a source/drain region formed in the substrate to form an active area, the active area having an active area width; and at least two gates formed above the substrate. The at least two gates having a gate width. The gate width is configured to be less than the active area width. And, the at least two gates are formed such that the source/drain region is between the two gates to form at least one channel between the two gates.

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Patent Owner(s)

  • TDK CORPORATION

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bao, Jianwen Greensboro, US 16 135
Gahlsdorf, Rien Bedford, US 9 48

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