Memory elements using self-aligned phase change material layers and methods of manufacturing same

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United States of America Patent

PATENT NO 9595672
APP PUB NO 20160035977A1
SERIAL NO

14881630

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Abstract

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A memory element and method of forming the same. The memory element includes a first electrode within a via in a first dielectric material. An insulating material element is positioned over and in contact with the first electrode. A phase change material is positioned over the first electrode and in contact with sidewalls of the insulating material element. The phase change material has a first surface in contact with a surface of the first electrode and a surface of the first dielectric material. A second electrode is in contact with a second surface of the phase change material, which is opposite to the first surface.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Liu, Jun Boise, US 1409 16637

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