MOS capacitors with interleaved fingers and methods of forming the same

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United States of America Patent

PATENT NO 9595942
APP PUB NO 20160294367A1
SERIAL NO

15085669

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Abstract

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A capacitor structure is described. The capacitor structure includes a substrate; a plurality of source/drain regions formed in said substrate to form an active area, the active area having an active area width; and a first and a second plurality of gates formed above the substrate. Each gate of the first and second plurality of gates having a gate width. The gate width is configured to be less than the active area width and each gate of the first and second plurality of gates is formed between a pair of source/drain regions of the plurality of source/drain regions such that the first plurality of gates interleave with the second plurality of gates.

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Patent Owner(s)

  • TDK CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bao, Jianwen Greensboro, US 16 135
Gahlsdorf, Rien Bedford, US 9 48

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