Semiconductor device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Mar 21, 2017
Grant Date -
Sep 24, 2015
app pub date -
Feb 10, 2015
filing date -
Mar 19, 2014
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A semiconductor device includes a first transistor having a first conductivity type SiC layer, a second conductivity type SiC well region, a first conductivity type SiC first source region, a first conductivity type SiC first drain region, and a first gate electrode provided on the well region sandwiched between the first source region and the first drain region. The device includes a second transistor having a second conductivity type SiC second source region, a second conductivity type SiC second drain region provided on the SiC layer, and a second gate electrode provided on the SiC layer sandwiched between the second source region and the second drain region. There is an angle between a direction of a channel forming portion of first transistor and that of the second transistor. The device includes an element isolation region having a bottom positioned in the SiC layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully