Method for depositing an aluminium nitride layer

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United States of America Patent

PATENT NO 9607831
SERIAL NO

14633639

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Abstract

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A method for depositing an aluminium nitride layer on a substrate is provided that comprises: providing a silicon substrate; placing the substrate in a vacuum chamber; conditioning a surface of the substrate by etching and providing a conditioned surface; depositing an aluminum film onto the conditioned surface of the substrate by a sputtering method under an atmosphere of Argon and depositing an epitaxial aluminium nitride layer on the aluminum film by a sputtering method under an atmosphere of Nitrogen and Argon.

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Patent Owner(s)

Patent OwnerAddress
EVATEC AGHAUPTSTRASSE 1A TRÜBBACH 9477

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Castaldi, Lorenzo Galgenen, CH 2 12
Felzer, Heinz Landquart, CH 6 26
Heinz, Bernd Buchs, CH 19 66
Kratzer, Martin Feldkirch, AT 6 18
Mamazza,, Jr Robert Buchs, CH 4 58

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