Method for forming field effect transistors

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United States of America Patent

PATENT NO 9607903
SERIAL NO

15252586

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Abstract

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A method for forming field effect transistors comprises forming a first dummy gate stack over a first fin, forming a second dummy gate stack over a second fin, depositing a first layer of spacer material on the first dummy gate stack, the first fin, the second dummy gate stack, and the second fin, patterning a first masking layer on the first dummy gate stack and the first fin, etching to remove portions of the first layer of spacer material and form a spacer adjacent to the second dummy gate stack, removing the first masking layer, epitaxially growing a silicon material on the second fin, depositing a layer of oxide material on the first layer of spacer material, the first epitaxial material and the second dummy gate stack, and depositing a second layer of spacer material on the layer of oxide material.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.;INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kambhampati, Rama Milpitas, US 6 32
Wang, Junli Singerlands, US 492 2761
Xie, Ruilong Schenectady, US 1423 10722
Yamashita, Tenko Schenectady, US 599 4956

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