Nanowire semiconductor device

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United States of America Patent

PATENT NO 9608099
APP PUB NO 20170084729A1
SERIAL NO

14861171

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A method for forming a nanowire device comprises forming a fin on a substrate, depositing a first layer of insulator material on the substrate, etching to remove portions of the first layer of insulator material to reduce a thickness of the first layer of insulator material, epitaxially growing a first layer of semiconductor material on exposed sidewall portions of the fin, depositing a second layer of insulator material on the first layer of insulator material, etching to remove portions of the second layer of insulator material to reduce a thickness of the second layer of insulator material, and etching to remove portions of the first layer of semiconductor material to expose portions of the fin and form a first nanowire and a second nanowire.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Haensch, Wilfried E Somers, US 75 851
Leobandung, Effendi Stormville, US 536 4748
Yamashita, Tenko Schenectady, US 599 4947

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