Recessed transistors containing ferroelectric material
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United States of America Patent
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Mar 28, 2017
Grant Date -
Apr 7, 2016
app pub date -
Sep 10, 2015
filing date -
Oct 7, 2014
priority date (Note) -
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Abstract
Some embodiments include transistor constructions having a first insulative structure lining a recess within a base. A first conductive structure lines an interior of the first insulative structure, and a ferroelectric structure lines an interior of the first conductive structure. A second conductive structure is within a lower region of the ferroelectric structure, and the second conductive structure has an uppermost surface beneath an uppermost surface of the first conductive structure. A second insulative structure is over the second conductive structure and within the ferroelectric structure. A pair of source/drain regions are adjacent an upper region of the first insulative structure and are on opposing sides of the first insulative structure from one another.
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