Method of forming acoustic resonator using intervening seed layer

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United States of America Patent

PATENT NO 9608589
APP PUB NO 20120096697A1
SERIAL NO

12911986

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Abstract

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A method of forming an acoustic resonator includes forming a seed layer on a first electrode layer, forming a piezoelectric layer directly on a surface of the seed layer, and forming a second electrode layer on the piezoelectric layer. The piezoelectric layer includes multiple crystals of piezoelectric material, and the seed layer causes crystal axis orientations of the crystals to be substantially perpendicular to the surface of the seed layer.

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Patent Owner(s)

  • AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Choy, John Westminster, US 64 2217
Feng, Chris Fort Collins, US 41 1246
Grannen, Kevin J Thornton, US 59 1180
Nikkel, Phil Loveland, US 51 1503

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