Manufacturing method of semiconductor device

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United States of America Patent

PATENT NO 9609251
SERIAL NO

14790989

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Abstract

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A drain of a first transistor is formed by performing ion implantation on a semiconductor substrate using a first member as a mask for a gate electrode of the first transistor. Further, ion implantation is performed on the gate electrode of the second transistor after thinning a second member.

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Patent Owner(s)

  • CANON KABUSHIKI KAISHA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ishino, Hideaki Fujisawa, JP 24 69
Itahashi, Masatsugu Yokohama, JP 49 586
Mishima, Ryuichi Machida, JP 35 412
Okabe, Takehito Atsugi, JP 35 234
Togo, Kenji Kawasaki, JP 9 58

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