Triple patterning NAND flash memory

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United States of America Patent

PATENT NO 9613806
SERIAL NO

14018236

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Abstract

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A NAND flash memory array is initially patterned by forming a plurality of sidewall spacers according along sides of patterned portions of material. The pattern of sidewall spacers is then used to form a second pattern of hard mask portions including first hard mask portions defined on both sides by sidewall spacers and second hard mask portions defined on only one side by sidewall spacers.

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Patent Owner(s)

  • SANDISK TECHNOLOGIES LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hong, Mun Pyo San Ramon, US 56 405
Pham, Tuan Duc San Jose, US 26 157
Sel, Jongsun Los Gatos, US 23 331

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