Vertical finfet with strained channel

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9614077
SERIAL NO

15060124

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A vertical transistor including a strained vertical semiconductor material channel pillar and a method of forming the same are provided. A strained vertical semiconductor materials pillar is first formed and is used to provide the strained vertical semiconductor material channel pillar of the vertical transistor of the present application. The strained vertical semiconductor material pillar is always mechanically anchored during various vertical transistor processing steps so that in the final structure strain is preserved.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Kangguo Schenectady, US 3073 29791
Divakaruni, Ramachandra Ossining, US 277 5672
Li, Juntao Cohoes, US 579 3153

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
7.5 Year Payment $3600.00 $1800.00 $900.00 Oct 4, 2024
11.5 Year Payment $7400.00 $3700.00 $1850.00 Oct 4, 2028
Fee Large entity fee small entity fee micro entity fee
Surcharge - 7.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00